Header menu link for other important links
A 250 mV Cu/SiO2/W Memristor with Half-Integer Quantum Conductance States
S.R. Nandakumar, M. Minvielle, , C. Dubourdieu, B. Rajendran
Published in American Chemical Society
Volume: 16
Issue: 3
Pages: 1602 - 1608
Memristive devices, whose conductance depends on previous programming history, are of significant interest for building nonvolatile memory and brain-inspired computing systems. Here, we report half-integer quantized conductance transitions G = (n/2) (2e2/h) for n = 1, 2, 3, etc., in Cu/SiO2/W memristive devices observed below 300 mV at room temperature. This is attributed to the nanoscale filamentary nature of Cu conductance pathways formed inside SiO2. Retention measurements also show spontaneous filament decay with quantized conductance levels. Numerical simulations shed light into the dynamics underlying the data retention loss mechanisms and provide new insights into the nanoscale physics of memristive devices and trade-offs involved in engineering them for computational applications. © 2016 American Chemical Society.
About the journal
JournalData powered by TypesetNano Letters
PublisherData powered by TypesetAmerican Chemical Society