Though the concept of the thin film device, known by the name, memristors, as coined by Leon Chua, was theorized in 1971, it was only from the year 2008 that these thin film devices gained broader attention when R. Stanley Williams and his team demonstrated the first practical realization of the memristor at the HP labs. Memristors have been considered as the fourth fundamental circuit element, adding to resistors, capacitors and inductors. Among several other applications, the most unique application of memristors is that, while they occupy very little chip area, the synapses in the brain can be closely modeled using these devices. The memristive device from HP had two platinum electrodes on either side of a titanium dioxide (TiO2) and oxygen deficient titanium dioxide (TiO2-x) layers. The boundary separating the stoichiometric and oxygen deficient TiO2 regions can be shifted on either side under the effect of an applied electric field. The current-voltage characteristics of this device from HP Labs exhibited a pinched hysteresis loop with a zero-crossing, depicting high resistance and low resistance states distinctly. Since the discovery at HP labs, researchers have reported several material choices for the electrodes and the active region (TiO2-TiO2-x). This paper presents a qualitative study on the material aspects of these nanoscale devices. Also, an exhaustive study of the different methodologies for fabricating such memristive systems is presented in this paper. These two terminal devices can be fabricated in a variety of ways but each method of fabrication has its own set of limitations since these devices operate at the nanoscale. The suitability of the single step and two step nano-imprint lithography (NIL) for memristors has been qualitatively examined in this paper © 2019 Elsevier Ltd.