FinFET and Tunnel FET (TFET) are the most promising candidate in modern semiconductor industry for their superior performance into the deep submicron level beyond 45 nm. Where conventional MOSFET tangles with the adverse Short Channel Effects (SCE), both FinFET and TFET provide most desire solutions to these SCE. In this paper, basic performance parameters of the FinFET and TFET has been evaluated and the result shows that a simple D Flip Flop (D FF) made up of FinFET is 2.68 times faster compare to the D FF made up of TFET. Meanwhile, the TFET type D FF consumes 2.79 times less power than the FinFET type D FF. © 2017 Taylor & Francis Group, London.