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Journal Article
A Soft Error Study on Tri-gate based FinFET and Junctionless-FinFET 6T SRAM Cell – A Comparison
Chitra P
,
Ravi S
,
Ramakrishnan V-N
Published in Universitas Ahmad Dahlan
2016
DOI:
10.12928/TELKOMNIKA.v14i4.3458
Volume: 14
Issue: 4
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Journal Details
Authors (2)
About the journal
Journal
TELKOMNIKA (Telecommunication Computing Electronics and Control)
Publisher
Universitas Ahmad Dahlan
ISSN
1693-6930
Open Access
0
Authors (2)
Ravi S
Department of Micro and Nanoelectronics
School of Electronics Engineering
Vellore Campus
Recent publications
Skew and power reduction using tunable clock buffers and inverters
Clock Skew Optimization in Pre and Post CTS
Desing and Implementation of a Microcontroller Based Buck Boost Converter as a Smooth Starter for Permanent Magnet Motor
Design and Analysis of Clock Gating Elements
Ramakrishnan V-N
Department of Micro and Nanoelectronics
School of Electronics Engineering
Vellore Campus
Recent publications
Analysis of quantum capacitance on different dielectrics and its dependence on threshold voltage of CNTFET
IRadiation Induced SET Impact on DG-FINFET based LC-VCO Design
Application of memristors in active filters
A Novel Approach to Analyze Current-Voltage Characteristics of Double Gated-Memristor
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