In this paper, the self-heating and mutual thermal coupling in a state-of-the-art SiGe:C multi-finger heterojunction bipolar transistor (HBT) was investigated in static dc operation conditions. Multi-finger HBT structure was created using Sentaurus structure editor with dimensions similar to the layout of SiGe:C multi-finger HBTs in ST-Microelectronics BiCMOS55 (B55) technology (fT > 300 GHz, fmax > 400 GHz) as per ST’s BiCMOS55 process design kit guidelines. Three-dimensional thermal technology computer aided design (TCAD) simulations were carried out to obtain the temperature distribution in static dc operation. The lattice temperature (TLattice) and heat flux (FHeat) distribution inside the device were studied. The impact of back-end-of-line (BEOL) layers on static thermal behavior of the state-of-the-art SiGe:C multi finger HBTs was also investigated. The temperature dependent thermal resistance of different fingers of the trench isolated SiGe multi-finger HBT was extracted without and with back-end-of-line (BEOL) effect. An electro-thermal dc compact model of self-heating and mutual thermal coupling in multi-finger HBTs was proposed and applied to compare the modeling results with the TCAD simulation results. Very good agreement was achieved between results obtained from TCAD simulation and those obtained from compact model-based simulation. © 2016, The Minerals, Metals & Materials Society.