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An analytical model for electron tunneling in triangular quantum wells
, S. Ganguly
Published in IOP Publishing Ltd
Volume: 36
Issue: 5
An analytical expression for the decay rate of quasi-bound states (QBS) in a triangular quantum well is derived by considering the resonance scattering of particles from the triangular potential profile. Asymptotic properties of the Airy functions that are solutions to the Schrödinger equation for a linear or triangular potential and a perturbative expansion for a small broadening of the QBS are utilized to derive the expression for its location E0 as well as the decay rate Γ that further gives the net tunneling current from the well. The triangular well model is commonly used to represent the band-bending near a heterojunction due to the electrostatic field. This compact expression shows excellent agreement with a full numerical solver and improvement over Wentzel-Kramers-Brillouin based calculations is demonstrated. © 2021 IOP Publishing Ltd.
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JournalData powered by TypesetSemiconductor Science and Technology
PublisherData powered by TypesetIOP Publishing Ltd