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Analogue/RF performance attributes of underlap tunnel field effect transistor for low power applications
, B.S. Reniwal, P. Singh, S.K. Vishvakarma
Published in Institution of Engineering and Technology
Volume: 52
Issue: 7
Pages: 559 - 560
Tunnel field effect transistor (TFET) is being considered as an alternative to the conventional MOSFETs for low power system on chip applications. In this Letter, gate-drain underlap (UL) feature of double gate TFET for analogue/RF characteristic is discussed. Here, it is found that parasitic resistance induced by gate drain UL is not significant as compared with DG tunnel field effect transistor (DG-FET). Thus, the behaviour of RF figure of merit is different from DG-FET. © 2016 The Institution of Engineering and Technology.
About the journal
JournalElectronics Letters
PublisherInstitution of Engineering and Technology