With the objective to achieve high drain current at lesser dimension in CMOS technology, device dimension reaches to Sub Nm region and undesirable effect such as short channel effect, high leakage current, DIBL are get introduced. And the desired characteristics become disturbed. As a solution to these problems, we have proposed a structure of Double material Double Gate strained n- MOSFET in this paper. This has an ability to reduce hot carrier effect and DIBL and have high drain current also due to presence of strained channel. Simulation work has been done on ATLAS, a 2D device simulator from Silvaco Inc. © 2018 IEEE.