Analytical models of drain current of strained-Si/strained-Si1-YGeY/relaxed- Si1-XGeX (X &lt; Y) n-channel and p-channel MOSFETs are presented. The field-dependent mobility variations and velocity saturation of carriers are taken into account in these models. The drain current model of p-channel MOSFET considers carrier transport at the top heterointerface in SiGe as well as at the Si/SiO2 interface. These models have been implemented in SABER, a circuit simulator. The results from the models show excellent agreement with experimental data. © 2006 Elsevier Ltd. All rights reserved.

Bindu B

Electronics

School of Electronics Engineering

Chennai Campus

N. DasGupta

A. DasGupta

Vellore Institute of Technology (VIT) is a private university located in&nbsp;Tamil Nadu, India. Founded in 1984, as Vellore Engineering College, the institution offers 20 undergraduate, 34 postgraduate, four integrated and four research programs. It has campuses in Vellore, Amravati, Bhopal and Chennai.

VIT is one of the top ranked private universities in India according to NIRF, THE and QS Rankings.&nbsp;Govt. of India has recognized&nbsp;VIT, Vellore as an&nbsp;Institution of Eminence. This has allowed VIT to take independent quality initiatives and move up in world ranking.

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Journal	Solid-State Electronics
ISSN	00381101