In this paper we report an analytical modeling of N+-InP/n 0-In0.53Ga0.47As/p+-In 0.53Ga0.47As p-i-n photodetector for optical fiber communication. The results obtained on the basis of our model have been compared and contrasted with the simulated results using ATLAS™ and experimental results reported by others. The photodetector has been studied in respect of energy band diagram, electric field profile, doping profile, dark current, resistance area-product, quantum efficiency, spectral response, responsivity and detectivity by analytical method using closed form equations and also been simulated by using device simulation software ATLAS™ from SILVACO® international. The photodetector exhibits a high quantum efficiency ∼90%, responsivity ∼1.152-1.2 A/W in the same order as reported experimentally by others, specific detectivity ∼5 × 109 cm Hz1/2 W-1at wavelength 1.55-1.65 μm, dark current of the order of 10-11 A at reverse bias of 1.5 V and 10-13-10 -12 A near zero bias. These values are comparable to those obtained for practical p-i-n detectors. The estimated noise equivalent power (NEP) is of the order of 2.5 × 10-14 W. © 2010 Elsevier B.V. All rights reserved.