In this paper, microstrip square patch array antenna is designed using an asymmetric FIN-type. FIN-type structure is etched to create defects in the ground plane and analyze with an optimized air gap between patch and defect. It is used to achieve substantial suppression of cross-polarization, without affecting the co-polarized radiation pattern and input impedance. A 1×2 array unified with FIN-type DGS structure showing the 19dB enhancement of isolation. © 2018 IEEE.

Yogesh Kumar Choukiker

Department of Communication Engineering

School of Electronics Engineering

Vellore Campus

G Husna Khouser

Vellore Institute of Technology (VIT) is a private university located in&nbsp;Tamil Nadu, India. Founded in 1984, as Vellore Engineering College, the institution offers 20 undergraduate, 34 postgraduate, four integrated and four research programs. It has campuses in Vellore, Amravati, Bhopal and Chennai.

VIT is one of the top ranked private universities in India according to NIRF, THE and QS Rankings.&nbsp;Govt. of India has recognized&nbsp;VIT, Vellore as an&nbsp;Institution of Eminence. This has allowed VIT to take independent quality initiatives and move up in world ranking.

&nbsp;

&nbsp;

VIT University

2018 IEEE Indian Conference on Antennas and Propogation (InCAP)

Defected ground structure (DGS) integrated microstrip array has been explored and demonstrated here for the first time with the primary aim of achieving improved polarization purity. A shaped DGS with variable configuration has been conceived and designed for rectangular arrays. This unleashes new potential of DGS design by reducing the etched out area by 50%. A 2 × 2 DGS integrated array has been designed and experimentally demonstrated in X-band showing 12 dB improvement in the isolation between the copol and cross-pol radiations. © 2002-2011 IEEE.

IEEE Antennas and Wireless Propagation Letters

Defected ground structure integrated microstrip array antenna for improved radiation properties

A shaped defected ground structure (DGS) that is asymmetric in a specific radiating plane of a microstrip element has been explored with a view to addressing the cross-polarization (XP) issues. The asymmetric configuration has been conceived from an insight of the inherent asymmetry of the modal fields underneath a probe-fed microstrip patch and has been experimentally demonstrated as the best possible design compared to its predecessors in terms of the reduction in XP fields, angular span of suppression around boresight, and the space occupied by the defects. Different orientations of the defects with reference to the patches of different aspect ratio values have been thoroughly examined. More than 28-dB isolation between co-pol and cross-pol has been achieved over 190° angular range, which is indeed 140° more if compared with a conventional ground plane. Its superior characteristics with respect to the earlier designs have also been documented. © 2016 IEEE.

IEEE Transactions on Antennas and Propagation

Asymmetric Geometry of Defected Ground Structure for Rectangular Microstrip: A New Approach to Reduce its Cross-Polarized Fields

2010 IEEE Asia-Pacific Conference on Applied Electromagnetics (APACE)

Antenna with DGS for improved performance

Progress In Electromagnetics Research M

RADIATION PROPERTIES ENHANCEMENT OF TRIANGULAR PATCH MICROSTRIP ANTENNA ARRAY USING HEXAGONAL DEFECTED GROUND STRUCTURE

A defected ground structure (DGS) is proposed to reduce the cross-polarized (XP) radiation of a microstrip patch antenna. The proposed DGS pattern is simple and easy to etch on a commercial microstrip substrate. This will only reduce the XP radiation field without affecting the dominant mode input impedance and co-polarized radiation patterns of a conventional antenna. The new concept has been examined and verified experimentally for a particular DGS pattern employing a circular patch as the radiator. Both simulation and experimental results are presented. © 2005 IEEE.

Journal	Data powered by Typeset2018 IEEE Indian Conference on Antennas and Propogation (InCAP)
Publisher	Data powered by TypesetIEEE
Open Access	0