Micro-electro mechanical systems (MEMS) designing is used to produce component having very small dimensions. In this paper, MEMS-based pressure sensors working using the capacitive sensing technique are worked upon. Furthermore, using neural networks the voltage output produced is linearized. This decreases the non-linearity error. One possible limitation of this electrical circuit is the inability to be used in high temperature regions. This limitation has been overcome by implementing an electro-optic technique by means of which the electrical signal is converted to optical signal. This novelty does not only give the added benefit of being able to be used in inflammable regions but also eases transmission in remote locations. This is done by Mach-Zehnder interferometer whose simulations of intensity variation are studied using OptiBPM software. © 2001-2012 IEEE.

Sumit Kumar Jindal

Department of Embedded Technology

School of Electronics Engineering

Vellore Campus

Kumar Y

Priya S

Kumar A

Raghuwanshi S.K.

Vellore Institute of Technology (VIT) is a private university located in&nbsp;Tamil Nadu, India. Founded in 1984, as Vellore Engineering College, the institution offers 20 undergraduate, 34 postgraduate, four integrated and four research programs. It has campuses in Vellore, Amravati, Bhopal and Chennai.

VIT is one of the top ranked private universities in India according to NIRF, THE and QS Rankings.&nbsp;Govt. of India has recognized&nbsp;VIT, Vellore as an&nbsp;Institution of Eminence. This has allowed VIT to take independent quality initiatives and move up in world ranking.

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VIT University

Design and Analysis of MEMS Pressure Transmitter Using Mach–Zehnder Interferometer and Artificial Neural Networks

IEEE Sensors Journal

Capacitive Pressure Sensors have consistently been an indispensable application of MEMS (Micro Electro Mechanical Systems) because of their utility and precision. Silicon has proven to be a dominant material in MEMS based sensor design but it is unfit for applications operating in harsh environmental conditions. Silicon Carbide is a justified replacement to Silicon in these conditions due to its solitary attribute of robustness and high temperature tolerance. This work introduces a Silicon Carbide and Aluminum Nitride based DTMCPS (Double Touch Mode Capacitive Pressure Sensor) with a substrate notch. Condensed yet exhaustive step by step mathematics of key performance parameters have been detailed for the sensor under study. This is done to provide a detailed understanding of the underlying physical and mathematical principles. It also aims to provide a fast analysis model for prototyping the sensor to bypass the need for bulky simulation software. A Finite Element Analysis (FEM) analysis for the design was conducted using COMSOL and the results agree with the mathematical model. It is evident from numerical simulation and the FEM analysis that the proposed sensor provides better performance than comparable designs reported in literature. © 2018 Elsevier Ltd

Microelectronics Journal

Comprehensive assessment of MEMS double touch mode capacitive pressure sensor on utilization of SiC film as primary sensing element: Mathematical modelling and numerical simulation

An analytical model and numerical simulation for the performance of MEMS capacitive pressure sensors in both normal and touch modes is required for expected behavior of the sensor prior to their fabrication. Obtaining such information should be based on a complete analysis of performance parameters such as deflection of diaphragm, change of capacitance when the diaphragm deflects, and sensitivity of the sensor. In the literature, limited work has been carried out on the above-stated issue; moreover, due to approximation factors of polynomials, a tolerance error cannot be overseen. Reliable before-fabrication forecasting requires exact mathematical calculation of the parameters involved. A second-order polynomial equation is calculated mathematically for key performance parameters of both modes. This eliminates the approximation factor, and an exact result can be studied, maintaining high accuracy. The elimination of approximation factors and an approach of exact results are based on a new design parameter (δ) that we propose. The design parameter gives an initial hint to the designers on how the sensor will behave once it is fabricated. The complete work is aided by extensive mathematical detailing of all the parameters involved. Next, we verified our claims using MATLAB® simulation. Since MATLAB® effectively provides the simulation theory for the design approach, more complicated finite element method is not used. © 2017 Society of Photo-Optical Instrumentation Engineers (SPIE).

Journal of Micro/Nanolithography, MEMS, and MOEMS

Reliable before-fabrication forecasting of normal and touch mode MEMS capacitive pressure sensor: modeling and simulation

Microelectromechanical system-based capacitive pressure sensors have seen significant advancements in modeling and design. This paper provides a complete analysis of a novel improvement to existing models of the touch mode capacitive pressure sensor. An in-depth, step-by-step derivation of the capacitance, capacitive sensitivity and mechanical sensitivity is examined for the double-sided touch mode capacitive pressure sensor. The results generated are modeled and examined using MATLAB. Comparisons with previous models clearly delineate the improved performance in terms of capacitance and sensitivity. The analysis conducted dovetail perfectly with the modeled results. © 2017, Springer Science+Business Media, LLC.

Journal of Computational Electronics

Investigation of the influence of double-sided diaphragm on performance of capacitance and sensitivity of touch mode capacitive pressure sensor: numerical modeling and simulation forecasting

Microsystem Technologies

Capacitance and sensitivity calculation of double touch mode capacitive pressure sensor: theoretical modelling and simulation

A complete analytical model for clamped edge circular diaphragm non-touch and touch mode capacitive pressure sensor

Journal	Data powered by TypesetIEEE Sensors Journal
Publisher	Data powered by TypesetInstitute of Electrical and Electronics Engineers (IEEE)
ISSN	1530-437X
Open Access	0