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Design and Optimization of Double-Gate MOSFET to Reduce the Effects of Single Event Transients
Mohammed Aneesh Y, Pasupathy K.R,
Published in Springer International Publishing
Volume: 215
Pages: 583 - 588
In this paper, the effects of Single Event Transients (SETs) due to heavy-ion strike in Double-Gate (DG) MOSFET is studied through simulations. Based on the understanding through simulation studies, an optimized device design is proposed to reduce these effects. The charge deposition by the heavy-ion striking at the center of the channel and the transport of the released charge carriers towards the drain are simulated. The DG-MOSFET is optimized through channel doping, varying silicon thickness and back gate bias to reduce the effects of SETs. © Springer Nature Switzerland AG 2019.
About the journal
JournalData powered by TypesetSpringer Proceedings in Physics The Physics of Semiconductor Devices
PublisherData powered by TypesetSpringer International Publishing
Open AccessNo