In this paper, the effects of Single Event Transients (SETs) due to heavy-ion strike in Double-Gate (DG) MOSFET is studied through simulations. Based on the understanding through simulation studies, an optimized device design is proposed to reduce these effects. The charge deposition by the heavy-ion striking at the center of the channel and the transport of the released charge carriers towards the drain are simulated. The DG-MOSFET is optimized through channel doping, varying silicon thickness and back gate bias to reduce the effects of SETs. © Springer Nature Switzerland AG 2019.