The micromachining technique offers potential for bulk fabrication of miniature components at microwave and millimeter wave frequencies. Critical components of integrated RF front ends are RF switches. High isolation, voltage, and low stress are important characteristics depended by these applications. At higher frequency end, that is, at 35 GHz, achieving a low pull-in voltage is difficult as the overlapping area between the tx-line and beam (shunt). In this article, we present a low voltage, low stress, and high isolation shunt design at 35 GHz. Here, to achieve low voltage and low stress, the hinges that are attached to the beam are slight off-set toward inside than at ends. The proposed switches have good isolation, low insertion loss, and a low pull-in voltage at 35 GHz. Both electromagnetic and electromechanical modeling of the proposed switch designs is studied. The electromagnetic modeling is done using electromagnetic solver CST, whereas the electromechanical modeling is carried out using CoventerWare. © 2014 Wiley Periodicals, Inc. Microwave Opt Technol Lett 56:1483-1486, 2014 Copyright © 2014 Wiley Periodicals, Inc.