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Dopant Profile in Silicon Processing
Sharma R.
Published in Cambridge University Press (CUP)
2002
Volume: 716
   
Abstract
AbstractNon-Fickian effects are accounted for in dopant diffusion by the solution of hyperbolic mass wave propagative equation. The surface flux is represented by a modified Bessels composite function of first kind of 0th order in the open interval of τ>x.
About the journal
JournalData powered by TypesetMRS Proceedings
PublisherData powered by TypesetCambridge University Press (CUP)
ISSN0272-9172
Open Access0