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Dopant Profile in Silicon Processing
Sharma R.
Published in Cambridge University Press (CUP)
Volume: 716
AbstractNon-Fickian effects are accounted for in dopant diffusion by the solution of hyperbolic mass wave propagative equation. The surface flux is represented by a modified Bessels composite function of first kind of 0th order in the open interval of τ>x.
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JournalData powered by TypesetMRS Proceedings
PublisherData powered by TypesetCambridge University Press (CUP)
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