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Effect of la modification on antiferroelectricity and dielectric phase transition in solgel grown PbZrO3 thin films
, S.B. Krupanidhi
Published in
2010
Volume: 150
   
Issue: 37-38
Pages: 1755 - 1759
Abstract
Antiferroelectricity of solgel grown pure and La modified PbZrO3 thin films, with a maximum extent of 6 mol%, has been characterized by temperature dependent PE hysteresis loops within the applied electric field of 60 MVm. It has been seen that on extent of La modification electric field induced phase transformation can be altered and at 40 °C its maximum value has been observed at ±38 MVm on 6 mol% modifications whereas the minimum value is ±22 MVm on 1 mol%. On La modification the variation of electric field induced phase transformations at 40 °C has been correlated with the temperature of antiferroelectric phase condensation on cooling. The critical electric fields for saturated PE hysteresis loops have been defined from field dependent maximum polarizations and their variations on La modification show a similar trend as found in their dielectric phase transition temperatures. © 2010 Published by Elsevier Ltd. All rights reserved.
About the journal
JournalSolid State Communications
ISSN00381098