In this paper we have studied the effect of fin width (W), fin height (H), gate oxide thickness (T ox), gate length (L g) and doping (N d) values variations on unity gain cut-off frequency (f t) in Junctionless FET by performing extensive Technology CAD (TCAD) simulations. The parasitic series resistance decreases as fin width, fin height and doping increases while the total input capacitance (C gg) increases. Except the higher T ox with elevated doping values, the device is in g m dominated region resulting in increased f t as fin width, fin height and doping values increase. © 2013 Springer Science+Business Media New York.

Lakshmi B

Electronics

School of Electronics Engineering

Chennai Campus

Srinivasan R.

Vellore Institute of Technology (VIT) is a private university located in&nbsp;Tamil Nadu, India. Founded in 1984, as Vellore Engineering College, the institution offers 20 undergraduate, 34 postgraduate, four integrated and four research programs. It has campuses in Vellore, Amravati, Bhopal and Chennai.

VIT is one of the top ranked private universities in India according to NIRF, THE and QS Rankings.&nbsp;Govt. of India has recognized&nbsp;VIT, Vellore as an&nbsp;Institution of Eminence. This has allowed VIT to take independent quality initiatives and move up in world ranking.

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VIT University

Journal of Computational Electronics

This paper deals with the effect of structural, doping, and work function parameter variations on the Radio-Frequency metrics, unity gain cutoff frequency (ft), non-quasi static delay, intrinsic gain, and noise figure in double-gate Fin Field Effect Transistor (FinFET), junctionless FinFETs, and conventional and junctionless gate-all-around devices using Technology Computer-Aided Design simulations. This is done quantitatively by performing a simple sensitivity study experiment and screening analysis through Plackett-Burman's design of experiment approach. The individual and overall rankings of the input parameters for the devices considered are given. Gate length affects FinFETs significantly, whereas it does not affect junctionless devices. The impact of work function on the output responses is more in junctionless devices compared with that of FinFET and gate-all-around devices. Ovality in gate-all-around devices has no impact on all the output responses. Copyright © 2016 John Wiley &amp; Sons, Ltd.

International Journal of Numerical Modelling: Electronic Networks, Devices and Fields

Numerical modeling of process parameters on RF metrics in FinFETs, junctionless, and gate-all-around devices

In this paper we investigate the impact of process parameter variations such as temperature (T), channel doping concentration (ND), Fin height (Hfin) and Fin width (Wfin) on Radio Frequency (RF) stability performance of 20 nm Silicon on Insulator Junctionless FinFET (SOI JLFinFET). The developed RF stability model provides relation between critical frequency (fk) and small signal parameters which can be optimized for improved stability. Results shows as temperature increases (27–200 °C) cutoff frequency (fT) and maximum oscillation frequency (fmax) reduced by 12% and 8% respectively also stability factor (K) decreases by 20% at high frequency. Increasing ND, Hfin and Wfin increases fT and fmax but degrades stability performance. The result also provides optimized design guideline for operating SOI JLFinFET under RF range. © 2016 Elsevier Ltd

Microelectronics Journal

RF stability performance of SOI junctionless FinFET and impact of process variation

3D TCAD Simulation for CMOS Nanoeletronic Devices

Introduction of Synopsys Sentaurus TCAD Simulation

IEEE Electron Device Letters

High-Performance Junctionless MOSFETs for Ultralow-Power Analog/RF Applications

2012 8th International Caribbean Conference on Devices, Circuits and Systems (ICCDCS)

Analysis of gate capacitance of n-type junctionless transistors using three-dimensional device simulations

Journal	Data powered by TypesetJournal of Computational Electronics
Publisher	Data powered by TypesetSpringer Science and Business Media LLC
ISSN	1569-8025
Open Access	0