This paper investigates the effect of process variations on RF metrices, non-quasi static (NQS) delay, intrinsic gain and noise figure (NF) in 30 nm gate length Junctionless FET by performing extensive 3D TCAD simulations. Sensitivity of NQS delay, intrinsic gain and NF on different geometrical parameters and fin doping are studied. The most significant parameters are found to be gate length, fin width and fin doping. The underlap and gate oxide thickness have a least impact over these RF metrics. © 2006-2015 Asian Research Publishing Network (ARPN).