The optical and structural characteristics of H¯ ion-implanted ZnMgO were investigated by temperature-dependent photoluminescence (PL) and high-resolution X-ray diffraction (HRXRD). Low-energy (40 keV and 50 keV) hydrogen implantation was performed on RF-sputter-deposited ZnMgO thin films by varying the fluences from 1013 ions/cm2 to 5 × 1014 ions/cm2. Highly c-axis-oriented <002> ZnO films were observed for all samples, as confirmed by HRXRD. A gradual decrease in the acceptor concentration was observed with increasing fluence, as confirmed by low-temperature PL results. This suggests that hydrogen atoms act as a shallow donor. © 2015 SPIE.