Graphene oxide (GO) is prepared by the conventional Hummer's method and subsequently coated with polymaleic anhydride-alt-1-octadecene polymer (P-GO). Both GO and P-GO thin films are deposited on silicon substrate by dropcasting followed by air drying. Raman Spectroscopy, voltage - current (I-V) and polarization - electric field (P-E) measurements are used to study the micro-structural, electrical and ferroelectric behaviors of GO and P-GO thin films. The voltage - current (I-V) measurement shows that the synthesized GO and P-GO behaves like semiconducting and conducting materials respectively and are consistence with the results obtained from Raman spectroscopy measurement. The polarization - electric field (P-E) measurements shows that the polarization behavior is similar to lossy capacitor response with the combined effects of capacitor and resistor. © 2013 The Authors.