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Electron transport via a few-dopant cluster in the presence of counter-dopants in silicon nanowire transistors
C. Pandy, G. Prabhudesai, K. Yamaguchi, , Y. Neo, H. Mimura, D. Moraru
Published in IOP Publishing Ltd
Volume: 14
Issue: 5
Electron transport through a few-donor cluster flanked by acceptors is studied by first-principles and semi-empirical simulations in gated Sinanowire transistors with n+ electrostatically-doped source/drain. Local density-of-states spectra are probed by electrical characteristics at room temperature for clarifying modifications induced by acceptor-atoms on the energy states of the few-donor cluster. It is found that acceptor-atoms located between the few-donor cluster and the leads mainly shift the cluster potential, introducing a minor distortion to its energy spectrum. The results change only weakly as the acceptor-atoms are moved towards the Si nanowire surface, and systematically depend on the number of acceptors. © 2021 The Japan Society of Applied Physics.
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JournalData powered by TypesetApplied Physics Express
PublisherData powered by TypesetIOP Publishing Ltd