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Enhancement of charge and energy storage in sol-gel derived pure and La-modified PbZr O3 thin films
, S.B. Krupanidhi
Published in
2008
Volume: 92
   
Issue: 19
Abstract
Antiferroelectric lanthanum-modified PbZr O3 thin films with La contents between 0 and 6 at. % have been deposited on Pt (111) TiSi O2 Si substrate by sol-gel route. On the extent of La-modification, maximum polarization (Pmax) and recoverable energy density (W) have been enhanced followed by their subsequent reduction. A maximum Pmax (∼0.54 C m2 at ∼60 MVm) as well as a maximum W (∼14.9 Jcc at ∼60 MVm) have been achieved on 5% La modification. Both Pmax and W have been found to be strongly dependent on La-induced crystallographic orientations. © 2008 American Institute of Physics.
About the journal
JournalApplied Physics Letters
ISSN00036951