Get all the updates for this publication
Other
Erratum to: Enhancement of device performance by using quaternary capping over ternary capping in strain-coupled InAs/GaAs quantum dot infrared photodetectors (Applied Physics A, (2015), 118, 2, (511-517), 10.1007/s00339-014-8854-9)Published in Springer Verlag
2017
Volume: 123
Issue: 5
The original version of this article unfortunately contained a mistake. The captions to Figs. 3 and 4 were interchanged. The correct versions are given below. (Figure Presented.) © 2017, Springer-Verlag Berlin Heidelberg.
Postprint Version
Content may be subject to copyright.This is a post-peer-review, pre-copyedit version of an article published in Applied Physics A. The final authenticated v... ...This is a post-peer-review, pre-copyedit version of an article published in Applied Physics A. The final authenticated version is available online at: https://doi.org/10.1007/s00339-017-0898-1. The following terms of use apply: https://www.springer.com/gp/open-access/publication-policies/aam-terms-of-use.
About the journal
| Journal | Data powered by TypesetApplied Physics A: Materials Science and Processing |
|---|---|
| Publisher | Data powered by TypesetSpringer Verlag |
| ISSN | 09478396 |
Authors (1)
Sourav Adhikary- Background-limited long wavelength infrared InAs/InAs1−xSbx type-II superlattice-based photodetectors operating at 110 K
- The optical properties of strain-coupled InAs/GaAs quantum-dot heterostructures with varying thicknesses of GaAs and InGaAs spacer layers
- High performance bias-selectable three-color Short-wave/Mid-wave/Long-wave Infrared Photodetectors based on Type-II InAs/GaSb/AlSb superlattices
- Investigation of structural and optical properties of coupled multilayer InAs/GaAs quantum dots with combinational InAlGaAs/ GaAs capping
