HEMT (High Electron Mobility Transistor) Gallium Nitride (GaN), a heterostructure semiconductor with huge potential for fostering economic development in a silicon-based electronics industry, is currently facing growing production versus investment costs. The high intensity of the electric field and the mobility of electrons have previously demonstrated enormous potential for multigigahertz frequency communications and photonic applications at material level. Productivity developments on commercially viable wide area substrates are now at the marketing stage where GaN power conversion technologies are on the verge of available for market. The prospect to build on the research outlined here is very interesting in ways informed by unique problems emerging out of entirely advanced markets and applications. Hence, this series of innovation in GaN technology is not itself a road map, but a valuable set of state-of-the-art international GaN research that guides the next development process as market-driven needs evolve. Industrial companies make significant investments in a wide range of sector identifying the use of innovation in new circuit designs, packaging technologies and system level interfacing required to achieve and maximize the product benefits provided by GaN transistors. AlN / GaN MOS-HEMTs process layout is dealt with problems and challenges in the manufacturing process. The advanced technology is using Al2O3 thermally grown as a dielectric gate and system surface passivation. Significant improvement in system efficiency seen using Ohmic contact optimization and mesa sidewall passivation are elaborated. This paper describes and analyzes the DC and RF efficiency of the semiconductor switch and it is concluded that a GaN device with enhancement mode with a vertical structure is preferred as it has numerous advantages. These GaN devices are now employed in the field operating within power supplies and motor controls for industrial, commercial, and automotive applications, in addition to their recognition and reputation. © 2020 by Advance Scientific Research.