Using novel circuit design topology to include the sneak path current as a reference input, the performance of two RRAM devices with Ion/Ioff of 26 and 925 were compared for crosspoint array. The RRAM with better current distribution outperforms the RRAM with 36X higher Ion/Ioff, on crosspoint array. Thus, the RRAM devices should aim on tightening the current distribution, where high Ion/Ioff also consumes high power on circuit. © 2017 IEEE.