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Impact of current distribution on RRAM array with high and low Ion/Ioff devices
Zackriya V.M, Chin A,
Published in IEEE
Pages: 156 - 157
Using novel circuit design topology to include the sneak path current as a reference input, the performance of two RRAM devices with Ion/Ioff of 26 and 925 were compared for crosspoint array. The RRAM with better current distribution outperforms the RRAM with 36X higher Ion/Ioff, on crosspoint array. Thus, the RRAM devices should aim on tightening the current distribution, where high Ion/Ioff also consumes high power on circuit. © 2017 IEEE.
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JournalData powered by Typeset2017 IEEE Electron Devices Technology and Manufacturing Conference (EDTM)
PublisherData powered by TypesetIEEE
Open Access0