In this paper, we presented the impact of self-heating effect (SHE) in hybrid FinFET, which is a promising device for high-performance applications. The impact of variation of channel length (L_g), fin width (W_fin), buried oxide thickness (t_box), the pitch of the device (L_pitch) and a number of fins (N) on the increase in lattice temperature for hybrid FinFET is observed. The linear dependence of thermal resistance (R_th) on L_g, W_fin, and t_box; and nonlinear dependence on L_pitch and N is studied. It is seen that unlike trigate FinFET, hybrid FinFET have the advantage of increased drain current from 50 μA to 103 μA with an increase in L_pitch from 50 nm to 250 nm, also reduces lattice temperature from 726.5 K to 495.6 K.