This paper investigate the impact of metal contact on the performance of 10 nm channel length monolayer MoS2 transistor. We studied the interface charge density between various metal and MoS2 semiconductor interface using Atomistic Tool Kit (ATK). The electrical characteristics of MoS2 transistor is studied using extracted interface charge density. Non-equilibrium Green's function with mode space (NEGF_MS) is used to model the electron transport behavior of the monolayer MoS2 transistor for numerical simulation. We also investigate the impact of gate work function on drain characteristics, whereas the work function of gate metal has influenced the off-current. The drain current of monolayer MoS2 transistor with Scandium source/drain contact and Niobium as gate contact exhibits 1.92 times higher current than gold metal contact with reported field effect mobility of 649 cm2/V. © 2018 Elsevier Ltd