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Investigation of DC parameters of double gate tunnel field effect transistor (DG-TFET) for different gate dielectrics
S. Rathore, I. Bairagi,
Published in Institute of Electrical and Electronics Engineers Inc.
In this research we focused to study the DC parameters of Double Gate Tunnel Field Effect Transistor (DGTFET). To overcome the major challenges faced by the conventional MOSFET, a silicon-based TFET device structure is constructed with SiO2 as gate dielectric using TCAD simulator. The Id-Vg characteristic of the device is plotted and various DC parameters are extracted. The DC parameters considered here are leakage current (Ioff), driving current (Ion) and threshold voltage (Vt). The plot of electrostatic potential and electron barrier tunneling are also depicted. The same study is carried out for high κ-dielectrics like Silicon Nitride (Si3N4) and Hafnium Dioxide (HfO2). The performance of DC parameters for various gate dielectrics is compared and studied. © 2020 IEEE.