This paper investigates the effect of process variations on RF metrices, nonquasi static (NQS) delay, intrinsic gain and noise figure (NF) in conventional and Junctionless gate-all-around (GAA) devices by performing extensive 3D TCAD simulations. Sensitivity of NQS delay, intrinsic gain and NF on different process parameters is explored. The most significant parameters are found to be gate length and work function in both the GAA devices. Gate oxide thickness is significant in conventional GAA devices whereas wire doping is significant in Junctionless GAA devices. © Research India Publications.