In this paper we report a theoretical model of an Hg1-xCd xTe based photoconductive detector for characterizing the device in respect of voltage responsivity, quantum efficiency, detectivity and noise equivalent power. The results obtained on the basis of the model reveal that in the absence of surface recombination the device exhibits a peak quantum efficiency of 90%, voltage responsivity of the order of 103 VW -1, detectivity of the order of 108mHz1/2W -1, a 3dB bandwidth of 117.86 MHz and noise voltage of 5.4 × 10-6VHz-1/2. ©2006 IEEE.