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Multi-spectral InAs/GaAs-based quantum dot infrared photodetector with quaternary (InAlGaAs) capping operates at low bias voltagePublished in
2013
DOI: 10.1117/12.2002730
Volume: 8634
The quantum dot infrared photodetector is an emerging technology for advanced imaging. Multi-color imaging technologies are favored as they extend the boundary of applications of the device. We report multi-spectral performance of MBE grown InGaAs/GaAs (device A) and InAs/GaAs (device B) based photodetector with In0.21Al0.21Ga0.58As capping at 77K. Spectral response measurement of device A shows the presence of a strong photoresponse at 10.2μm. Device B exhibits a four color response (5.7, 9.0, 14.5, 17 and 20 μm) over a broad range (5- 20μm) at very low bias voltage. © 2013 SPIE.
Topics: Photodetector (55)%55% related to the paper, Biasing (53)%53% related to the paper, Quantum dot (51)%51% related to the paper, Indium gallium arsenide (51)%51% related to the paper and Indium arsenide (50)%50% related to the paper
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About the journal
| Journal | Proceedings of SPIE - The International Society for Optical Engineering |
|---|---|
| ISSN | 0277786X |
Authors (1)
Sourav Adhikary- Background-limited long wavelength infrared InAs/InAs1−xSbx type-II superlattice-based photodetectors operating at 110 K
- The optical properties of strain-coupled InAs/GaAs quantum-dot heterostructures with varying thicknesses of GaAs and InGaAs spacer layers
- High performance bias-selectable three-color Short-wave/Mid-wave/Long-wave Infrared Photodetectors based on Type-II InAs/GaSb/AlSb superlattices
- Investigation of structural and optical properties of coupled multilayer InAs/GaAs quantum dots with combinational InAlGaAs/ GaAs capping
