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Multi-stack InAs/InGaAs sub-monolayer quantum dots infrared photodetectors
J.O. Kim, S. Sengupta, A.V. Barve, Y.D. Sharma, , S.J. Lee, S.K. Noh, M.S. Allen, J.W. Allen, S. ChakrabartiShow More
Published in
2013
Volume: 102
   
Issue: 1
Abstract
We report on the design and performance of multi-stack InAs/InGaAs sub-monolayer (SML) quantum dots (QD) based infrared photodetectors (SML-QDIP). SML-QDIPs are grown with the number of stacks varied from 2 to 6. From detailed radiometric characterization, it is determined that the sample with 4 SML stacks has the best performance. The s-to-p (s/p) polarized spectral response ratio of this device is measured to be 21.7%, which is significantly higher than conventional Stranski-Krastanov quantum dots (∼13%) and quantum wells (∼2.8%). This result makes the SML-QDIP an attractive candidate in applications that require normal incidence. © 2013 American Institute of Physics.
About the journal
JournalApplied Physics Letters
ISSN00036951