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Negative Differential Resistance (NDR) Behavior of Nickel Oxide (NiO) Based Metal-Insulator-Semiconductor Structures
K. Khan, , D.G. Georgiev
Published in Springer
Volume: 49
Issue: 1
Pages: 333 - 340
This work presents a metal-insulator-semiconductor (MIS) structure based on nickel oxide (NiO) showing negative differential resistance (NDR) properties. The Ni / NiO / HfO 2/ Ni layers structure was obtained by multiple sputtering steps and was then characterized by electrical measurements and other relevant methods. The electrical characteristics of the MIS structure were studied as a function of the oxide layer thickness. The observed NDR behavior could be attributed to a combination of the band-bending and a tunneling current contribution. © 2019, The Minerals, Metals & Materials Society.
About the journal
JournalData powered by TypesetJournal of Electronic Materials
PublisherData powered by TypesetSpringer