This work presents a metal-insulator-semiconductor (MIS) structure based on nickel oxide (NiO) showing negative differential resistance (NDR) properties. The Ni / NiO / HfO 2/ Ni layers structure was obtained by multiple sputtering steps and was then characterized by electrical measurements and other relevant methods. The electrical characteristics of the MIS structure were studied as a function of the oxide layer thickness. The observed NDR behavior could be attributed to a combination of the band-bending and a tunneling current contribution. © 2019, The Minerals, Metals & Materials Society.