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Nitrogen ion beam synthesis of InN in InP(100) at elevated temperaturePublished in
2006
DOI: 10.1063/1.2186101
Volume: 88
Issue: 24
The InN phase is grown in crystalline InP(100) substrates by 50 keV N+ implantation at an elevated temperature of 400 °C followed by annealing at 525 °C in N2 ambient. Crystallographic structural and Raman scattering studies are performed for the characterization of grown phases. Temperature- and power-dependent photoluminescence studies show direct band-to-band transition peak ∼1.06 eV at temperatures ≤150 K. Implantations at an elevated temperature with a low ion beam current and subsequent low temperature annealing step are found responsible for the growth of high-quality InN phase. © 2006 American Institute of Physics.
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Content may be subject to copyright.This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publ... ...This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in [Nitrogen ion beam synthesis of InN in InP(100) at elevated temperature. Applied Physics Letters 88, 24 p241904 (2006)] and may be found at https://doi.org/10.1063/1.2186101.
About the journal
| Journal | Applied Physics Letters |
|---|---|
| ISSN | 00036951 |
Authors (1)
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