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Nonvolatile resistive switching of Mn3O4 thin films for flexible electronics applications
C.S. Dash, , S.R.S. Prabaharan
Published in Bentham Science Publishers
Volume: 10
Issue: 5
Pages: 622 - 630
Introduction: We report here our success in developing a flexible RRAM stack structure by employing a low-cost method. Bare conductive commercial electric paint is used as anode against Stain-less Steel (SS) foil deposited with Mn3O4 thin films forming a BCEP/Mn3O4/SS thin film stack to under-stand the intrinsic non-volatile resistive switching behavior of Mn3O4. Experimental: Thin film Mn3 O4 is deposited on a SS (304) foil by means of potential sweep voltammetry by maintaining typical conditions. Interestingly, the pristine device is subjected to an electroforming process which exhibited a digital type bipolar resistive switching characteristics. The study of the conduction mechanism revealed that the resistive switching arises due to local effect occurring in the bulk of Mn3O4, which corresponds to the growth and annihilation of oxygen vacancy nanofilaments, and this is respons-ible for the change in resistance state of the RRAM between Low Resistance State (LRS) and High Resistance State (HRS) respectively. Results: In order to affirm the reliability and reproducibility of RRAM structure, the memory retention is monitored over 103 s and subsequently, the endurance test is also carried out ensuring the reproducibility over 100 cycles. Conclusion: Owing to the flexible nature of BCEP/Mn3O4/SS Foil RRAM stack structure, it is perceived to be a prime candidate for future non-volatile memory and flexible electronics applications. © 2020 Bentham Science Publishers.
About the journal
JournalNanoscience and Nanotechnology - Asia
PublisherBentham Science Publishers