This paper deals with the effect of structural, doping, and work function parameter variations on the Radio-Frequency metrics, unity gain cutoff frequency (ft), non-quasi static delay, intrinsic gain, and noise figure in double-gate Fin Field Effect Transistor (FinFET), junctionless FinFETs, and conventional and junctionless gate-all-around devices using Technology Computer-Aided Design simulations. This is done quantitatively by performing a simple sensitivity study experiment and screening analysis through Plackett-Burman's design of experiment approach. The individual and overall rankings of the input parameters for the devices considered are given. Gate length affects FinFETs significantly, whereas it does not affect junctionless devices. The impact of work function on the output responses is more in junctionless devices compared with that of FinFET and gate-all-around devices. Ovality in gate-all-around devices has no impact on all the output responses. Copyright © 2016 John Wiley & Sons, Ltd.