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Optimization of Vertical GaN SGT-MOSFET for Low Ron
N.K. Jaiswal, , S. Deb Roy
Published in Institute of Electrical and Electronics Engineers Inc.
We present a new 600 V breakdown optimized vertical GaN Split-Gate Trench power MOSFET (SGTMOSFET) device with significantly reduced specific on-resistance and lower reverse capacitance. Using TCAD numerical simulations, we demonstrate that the SGTMOSFET exhibits about 30% lower specific on-resistance and about five times reduction in the reverse capacitance when compared to a conventional TG-MOSFET with similar breakdown voltage. © 2020 IEEE.