In this paper, dual metal gate (DMG) electrode work function concept is applied in junctionless transistors. Three different DMG structures along with the single metal gate (SMG) are studied and their performance with respect to the drive current (ION), unity gain cut-off frequency (ft) and output resistance (Ro) are compared using extensive TCAD simulations. Two different gate lengths, 100 nm and 50 nm, and two different gate oxide thicknesses, 1 nm and 3 nm, are explored. Two of the DMG structures, namely DMG-I and II show superior performance compared to SMG devices. A permissible range of work functions which show performance enhancement against SMG device are suggested. Copyright © 2013 American Scientific Publishers All rights reserved.