This work has investigated the performance of Single-walled carbon nanotube bundle as futuristic interconnect material under process constraints and compared its suitability as IC interconnect material as per ITRS predictions. It also analyzes variance of each parasitic effect along with the variations in process parameters. This paper pinpoints the variables causing bottlenecks in realizing optimum performance and improving reliability. It also evaluates the effect of diameter variations of CNTs in an SWCNT bundle and metallic tube ratio on the performance and reliability for 22nm technological node. The results demonstrate that the relative variations in the resistance are critically effected by the variations in metallic tube ratios rather than diameter variations. The diameter variation introduces its critical effect only at global level.