One of the semiconductor device fabrication processes include annealing, a process by which silicon wafer is heated at higher temperature for a certain duration and then cooled down slowly. The main purpose of annealing is to mend the damage caused by ion implantation and to increase the electrical activation of dopant atoms. Traditionally, annealing has been used to enhance the material properties and electrical characteristics of conventional semiconductors devices made from silicon and gallium arsenide which found applications in normal human environment. Being a wideband gap semiconductor with noble physio thermoelectric properties, silicon carbide has been a choice of material for higher temperature and higher-power applications. Due to inertness to chemical reaction at nominal temperature, ion implantation is reported to be a preferred method for doping silicon carbide. As the ion implantation causes material destruction a suitable annealing scheme is required for recovering crystal damages and dopant activation. In this paper, effect of different annealing scheme viz. post implantation annealing, post deposition and post metallization annealing on the electrical and structural characteristics of silicon carbide-based devices reported till date are reviewed comprehensively. © 2020, World Academy of Research in Science and Engineering. All rights reserved.