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Radiation effects on memristor-based non-volatile SRAM cells
Vijay H.M,
Published in Springer Science and Business Media LLC
Volume: 17
Issue: 1
Pages: 279 - 287
Memristors are a promising candidate for non-volatile memory elements. In this paper, we performed a radiation study on different memristor-based topological Non-Volatile Static Random Access Memory (NVSRAM). A Voltage ThrEshold Adaptive Memristor (VTEAM) model is considered for simulation analysis related to this work. In this paper, four different topologies, namely 3-Transistor 2-Memristor (3T2M) SRAM cell, 2-Transmission Gate 1-Memristor (2TG1M) SRAM cell, 1-Transistor 1-Memristor (1T1M) SRAM cell, and 4-Transistor 2-Memristor (4T2M) SRAM cell are investigated. A double-exponential current pulse is induced during a read operation and perturbation is observed due to irradiation. The memory cell retains its original state after radiation dose is removed. 4T2M SRAM topology is more reliable because its highest threshold current value is 100μA, whereas 1T1M SRAM topology is less reliable with the lowest threshold current value of 5 nA. © 2017, Springer Science+Business Media, LLC.
About the journal
JournalData powered by TypesetJournal of Computational Electronics
PublisherData powered by TypesetSpringer Science and Business Media LLC
Open AccessNo