This paper puts forward two class E power amplifier implementations in 30 nm DG-SOI FINFET technology. The first configuration using a single transistor has a PAE of 92% that provides a power gain of 37.017 dB. The second configuration is a cascode class E amplifier that has a PAE of 85.16% by giving a power gain of 20.86 dB. The cascode amplifier circuit configuration has been used in order to reduce the voltage stress and thus increases the reliability of RF communication systems. Both the circuits operate at 10 GHz frequency range, by providing an output power of 26 dBm. m. For the single device and cascode configuration, 0.5 mA and 2 mA is the threshold current amplitude above which SEU impact is observed. © Research India Publications.