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Random Dopant induced variability in SOI trigate FINFET: A simulation study
G. Rama Pradeep Reddy,
Published in
2012
Pages: 581 - 584
Abstract
This paper presents a comprehensive 3-D simulation variability study of parameters like threshold voltage (V th), transconductance (g m), ON resistance (R on), subthreshold slope (SS), ON current (I on) and OFF current (I off) due to Random Discrete Dopants (RDD) allocated in the channel due to very small channel volume. Both the 2D and 3D simulations of variability are carried out for analysis. The variability in the inverter characteristics are also presented. © 2012 IEEE.
About the journal
Journal2012 International Conference on Devices, Circuits and Systems, ICDCS 2012