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Realisation of silicon piezoresistive accelerometer with proof mass-edge-aligned-flexures using wet anisotropic etching
, Grace Jency J, Ashwini J, Das S.
Published in Institution of Engineering and Technology (IET)
Volume: 7
Issue: 2
Pages: 118 - 121
This Letter presents simulation, fabrication and testing of a high-performance quad-beam silicon piezoresistive accelerometer with very low cross-axis sensitivity. Cross-axis sensitivity in piezoresistive accelerometers is an important issue particularly for high-performance applications. In the present Letter, low cross-axis sensitivity is achieved by improving the device stability by placing four flexures in line with the proof mass edges. The accelerometer device is realised in a single-step double-sided bulk micromachining technique using a 5 dual-doped tetra methyl ammonium hydroxide solution as an anisotropic etchant. Test results of four fabricated devices show an average prime-axis sensitivity of 559.5μV/g/5V, a maximum cross-axis sensitivity of 0.62 full scale (FS acceleration=13g) of the prime-axis sensitivity and nonlinearity at a level of 0.5 of FS which are comparatively better than already reported devices and commercially available piezoresistive sensors. © 2012 The Institution of Engineering and Technology.
About the journal
JournalMicro & Nano Letters
PublisherInstitution of Engineering and Technology (IET)
Open AccessNo