In this paper, a Schottky barrier silicon-on-insulator (SOI) MOSFET with asymmetric doping (dopant segregated) at the source/drain side and a metal strip in the BOX (Buried oxide) layer has been proposed. The asymmetric doping reduces the off-state leakage (IOFF) and improves the on-state drive current (ION) in comparison to the conventional structure. The metal strip inside the BOX improves the subthreshold swing and ION/IOFF current ratio. The simulation study of a conventional device using an image force barrier lowering model and without image force barrier lowering is presented. The channel length scaling leads to a high on-current in the conventional device. The thermionic emission and tunneling current are increased with barrier lowering and hence a high leakage current in the off-state region. Moreover, the proposed device is compared with the conventional device. The proposed device shows high ION/IOFF ratio of 107-108 at VDS = 0.1 V and Subthreshold Swing (SS) of 66 mV/dec. © 2017, Springer Science+Business Media Dordrecht.