Common double gate-FinFET (simultaneously driven gates) and independent double gate-FinFET (independently driven gates) based 6T-SRAM cells are studied in this paper for their Single Event Upset (SEU) or soft error performance using 3D TCAD simulations. Four different topologies, one common double gate-FinFET-based topology and three independent double gate-FinFET-based topologies namely, Flex-V TH, Flex-PG, and PG-SN are studied to find out their minimum radiation dose required to flip SRAM cell. The simulation results reveal that the independent double gate FinFETs in place of access devices in 6T-SRAM does not degrade the soft error performance significantly whereas the independent gate devices inside the cell, in the inverters, degrades the performance significantly. © 2012 Elsevier Ltd.