In this paper, a new structure for a silicon on insulator Schottky barrier MOSFET (SOI SB-MOSFET) has been proposed. The simulated device is calibrated with experimental result. Here n + pocket doping segregation in the source and drain side have been used. The simulated electrical characteristics of the proposed device With Source Extension (WSE) and With Source Drain Extension (WSDE) reveal more remarkable reduction in drain induced barrier tunneling (DIBT), high Ion/Ioff and low Subthreshold swing(SS) than conventional device. Furthermore, the effect of varying temperature has been investigated on subthreshold swing for various oxide thickness (Tox) and silicon film thickness (TSi). Moreover, proposed SB-MOSFETs have been used in the inverter circuit, exhibit a high gain (˷12) and Noise Margin (NMH = 0.4 and NML = 0.46). © 2019, Springer Nature B.V.