Analysis of slanted beam MEMS capacitive accelerometer structures has been presented in this paper. A new structure has been proposed to be used for high g applications upto ±30 g. The proposed new structure has been compared with three other different structures. All the four structures were simulated using CoventorWare™ 2005 and their performance characteristics were compared. It has been found that other three structures are found suitable only for low g applications up to ±2 g. One among the four designs known as single beam structure was successfully fabricated in a single step anisotropic wet chemical etching in aqueous KOH solution using 〈111〉 plane as physical etch stop. ©2007 IEEE.