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Sub-monolayer quantum dots in confinement enhanced dots-in-a-well heterostructurePublished in
2012
DOI: 10.1063/1.4711214
Volume: 100
Issue: 19
We have investigated optical properties and device performance of sub-monolayer quantum dots infrared photodetector with confinement enhancing (CE) barrier and compared with conventional Stranski-Krastanov quantum dots with a similar design. This quantum dots-in-a-well structure with CE barrier enables higher quantum confinement and increased absorption efficiency due to stronger overlap of wavefunctions between the ground state and the excited state. Normal incidence photoresponse peak is obtained at 7.5 μm with a detectivity of 1.2 × 10 11 cm Hz 1/2 W -1 and responsivity of 0.5 A/W (77 K, 0.4 V, f/2 optics). Using photoluminescence and spectral response measurements, the bandstructure of the samples were deduced semi-empirically. © 2012 American Institute of Physics.
Topics: Quantum dot (63)%63% related to the paper, Quantum dot laser (62)%62% related to the paper, Superlattice (60)%60% related to the paper, Quantum point contact (60)%60% related to the paper and Quantum well (59)%59% related to the paper
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Content may be subject to copyright.This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publ... ...This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in [Sub-monolayer quantum dots in confinement enhanced dots-in-a-well heterostructure. Applied Physics Letters 100, 19 p191111 (2012)] and may be found at https://doi.org/10.1063/1.4711214.
About the journal
| Journal | Applied Physics Letters |
|---|---|
| ISSN | 00036951 |
Authors (1)
Sourav Adhikary- Background-limited long wavelength infrared InAs/InAs1−xSbx type-II superlattice-based photodetectors operating at 110 K
- The optical properties of strain-coupled InAs/GaAs quantum-dot heterostructures with varying thicknesses of GaAs and InGaAs spacer layers
- High performance bias-selectable three-color Short-wave/Mid-wave/Long-wave Infrared Photodetectors based on Type-II InAs/GaSb/AlSb superlattices
- Investigation of structural and optical properties of coupled multilayer InAs/GaAs quantum dots with combinational InAlGaAs/ GaAs capping
