Hexagonal phase InN was synthesized by 50 keV nitrogen ion implantation at 400 °C on an (100) InP single crystal substrate. The implanted samples were characterised using glancing incidence X-ray diffraction (GIXRD) and Raman spectroscopy. At low implantation dose the metallic In is observed to form due to the implantation-induced decomposition of the InP at 400 °C. As the implantation dose is increased complete nitradation takes place resulting in the disappearance of the metallic indium and formation of InN phase. © 2003 Elsevier B.V. All rights reserved.

Santhakumar K

Department of Chemistry

School of Advanced Sciences

Vellore Campus

R. Kesavamoorthy

K.G.M. Nair

P. Jayavel

D. Kanjilal

V. Sankara Sastry

V. Ravichandran

Vellore Institute of Technology (VIT) is a private university located in&nbsp;Tamil Nadu, India. Founded in 1984, as Vellore Engineering College, the institution offers 20 undergraduate, 34 postgraduate, four integrated and four research programs. It has campuses in Vellore, Amravati, Bhopal and Chennai.

VIT is one of the top ranked private universities in India according to NIRF, THE and QS Rankings.&nbsp;Govt. of India has recognized&nbsp;VIT, Vellore as an&nbsp;Institution of Eminence. This has allowed VIT to take independent quality initiatives and move up in world ranking.

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VIT University

Synthesis of InN by N+ implantation on InP at high temperature

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Journal	Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
ISSN	0168583X